上海理工大学 光电信息与计算机工程学院，上海 200093
基于石墨烯材料的半浮栅场效应晶体管因其非易失性的存储特性而被广泛研究。通过定点转移工艺制备了一种以少层石墨烯为沟道，六方氮化硼作为隧穿势垒层，石墨烯作为半浮栅电荷俘获层的石墨烯场效应晶体管。由于其独特的半浮栅结构，器件的转移特性曲线出现双狄拉克点。对器件转移特性曲线双狄拉克点现象进行了系统理论分析。另外，得到石墨烯浮栅器件的稳定保留特性，在200 s内，器件存储擦除电流差可以维持在20 μA左右。所提出的研究有助于实现基于半浮栅结构的二维材料多功能光电子器件。
石墨烯 半浮栅 场效应晶体管 存储器 graphene semi-floating gate field-effect device memory
Author Affiliations
Abstract
Key Laboratory for Physical Electronics and Devices, Ministry of Education, Shanxi Key Laboratory of Information Photonic Technique, Xi'an Jiaotong University, Xi'an 710049, China
Polarization dependence of the enhancement and suppression of four-wave mixing (FWM) in a multi-Zeeman level atomic system is investigated both theoretically and experimentally. A dressing field applied to the adjacent transition can cause energy level splitting. Therefore, it can control the enhancement and suppression of the FWM processes in the system due to the effect of electromagnetically induced transparency. The results show that the pumping beams with different polarizations select the transitions between different Zeeman levels that, in turn, affect the enhancement and suppression efficiencies of FWM.
四波混频 抑制增强 偏振 塞曼能级 270.1670 Coherent optical effects 190.4180 Multiphoton processes 190.4223 Nonlinear wave mixing Chinese Optics Letters
2011, 9(7): 072701
